Technical parameters/power supply current: 30 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/gain bandwidth product: 800 MHz
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 300 µV
Technical parameters/input bias current: 25 µA
Technical parameters/gain bandwidth: 800 MHz
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL55190IBZ-T13
|
Intersil | 完全替代 | SOIC-8 |
单路和双路超低噪音，超低失真，低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
||
ISL55190IBZ-T13
|
Renesas Electronics | 完全替代 | SOIC-8 |
单路和双路超低噪音，超低失真，低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
||
MCP651-E/SN
|
Microchip | 功能相似 | SOIC-8 |
MCP651 系列 5.5 V 50 MHz 轨对轨 I/O 运算放大器 - SOIC-8
|
||
MCP661-E/SN
|
Microchip | 功能相似 | SOIC-8 |
MICROCHIP MCP661-E/SN 运算放大器, 单路, AEC-Q100, 60 MHz, 1个放大器, 32 V/µs, 2.5V 至 5.5V, SOIC, 8 引脚
|
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