Chip AI consultant
Technical parameters/power supply current: | 30 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/gain bandwidth product: | 800 MHz |
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Technical parameters/Over temperature protection: | No |
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Technical parameters/input compensation voltage: | 300 µV |
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Technical parameters/input bias current: | 25 µA |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/power supply voltage (Max): | 5 V |
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Technical parameters/power supply voltage (Min): | 3 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL55190IBZ
|
Renesas Electronics | 完全替代 | SOIC-8 |
单路和双路超低噪音，超低失真，低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
||
ISL55190IBZ
|
Intersil | 完全替代 | SOIC-8 |
单路和双路超低噪音，超低失真，低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
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