Technical parameters/power supply current: 30 mA
Technical parameters/number of circuits: 1
Technical parameters/gain bandwidth product: 800 MHz
Technical parameters/input compensation voltage: 300 µV
Technical parameters/input bias current: 25 µA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL55190IBZ
|
Renesas Electronics | 完全替代 | SOIC-8 |
单路和双路超低噪音,超低失真,低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
||
ISL55190IBZ
|
Intersil | 完全替代 | SOIC-8 |
单路和双路超低噪音,超低失真,低功耗运算放大器 Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
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