Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1.25 W
Technical parameters/product series: IRS2112
Technical parameters/rise time: 130 ns
Technical parameters/descent time: 65 ns
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2110SPBF
|
International Rectifier | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2110SPBF
|
Infineon | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2112SPBF
|
Infineon | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 栅极驱动器,高侧和低侧,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
||
IRS2112SPBF
|
International Rectifier | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 栅极驱动器,高侧和低侧,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
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