Technical parameters/rated power: 89 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0069 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 115 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 91A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 2672pF @16V(Vds)
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 115W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR8103VTRL
|
Infineon | 类似代替 | TO-252-3 |
DPAK N-CH 30V 91A
|
||
IRLR8103VTRPBF
|
Infineon | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRLR8103VTRPBF DPAK
|
||
IRLR8103VTRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRLR8103VTRPBF DPAK
|
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