Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 91.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 115 W
Technical parameters/product series: IRLR8103V
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 2672pF @16V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 91.0 A, 89.0 A
Technical parameters/rise time: 9.00 ns
Technical parameters/Input capacitance (Ciss): 2672pF @16V(Vds)
Technical parameters/rated power (Max): 115 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR8103VPBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRLR8103VPBF 晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
|
||
IRLR8103VTRLPBF
|
International Rectifier | 类似代替 | TO-252-3 |
DPAK N-CH 30V 91A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review