Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 115W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 91A
Technical parameters/Input capacitance (Ciss): 2672pF @16V(Vds)
Technical parameters/dissipated power (Max): 115W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR8103VPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR8103VPBF 晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
|
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