Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 4.30 A
Technical parameters/rise time: 47 ns
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR110
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 4.3A DPAK
|
|||
IRLR110
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110
|
IRF | 完全替代 |
MOSFET N-CH 100V 4.3A DPAK
|
|||
IRLR110
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110ATF
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR110ATF
|
ON Semiconductor | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR110PBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 100V 4.3A 3Pin(2+Tab) DPAK
|
||
IRLR110TR
|
International Rectifier | 完全替代 | TO-252 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
VISHAY | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
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