Technical parameters/drain source resistance: 540 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 4.3A
Technical parameters/rise time: 47 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR110TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110TRPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110TRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 100V 4.3A DPAK
|
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