Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR110
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 4.3A DPAK
|
|||
IRLR110
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110
|
IRF | 完全替代 |
MOSFET N-CH 100V 4.3A DPAK
|
|||
IRLR110
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 100V 4.3A DPAK
|
||
IRLR110ATF
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR110ATF
|
ON Semiconductor | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR110PBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 100V 4.3A 3Pin(2+Tab) DPAK
|
||
IRLR110TR
|
International Rectifier | 完全替代 | TO-252 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
VISHAY | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
||
IRLR110TR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Mosfet n-Ch 100V 4.3A Dpak
|
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