Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.70 A
Technical parameters/drain source resistance: 440 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.70 A
Technical parameters/Input capacitance (Ciss): 235pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 22W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR110ATM
|
Fairchild | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR110PBF
|
International Rectifier | 功能相似 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRLR110TRPBF
|
VISHAY | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
|
||
IRLR110TRPBF
|
Vishay Intertechnology | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
|
||
IRLR110TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
|
||
IRLR110TRPBF
|
Vishay Semiconductor | 功能相似 | TO-252 |
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
|
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