Technical parameters/dissipated power: 3.1W (Ta), 50W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.1W (Ta), 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL620S
|
International Rectifier | 完全替代 |
MOSFET N-CH 200V 5.2A D2PAK
|
|||
IRL620S
|
IRF | 完全替代 |
MOSFET N-CH 200V 5.2A D2PAK
|
|||
IRL620S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 5.2A D2PAK
|
||
IRL620SPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3Pin
|
||
IRL620SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3Pin
|
||
IRL620STRLPBF
|
Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
|
|||
IRL620STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
|
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