Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 5.20 A
Technical parameters/rise time: 31 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL520S
|
International Rectifier | 功能相似 |
MOSFET N-CH 100V 9.2A D2PAK
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IRL620S
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International Rectifier | 功能相似 |
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IRL620S
|
IRF | 功能相似 |
MOSFET N-CH 200V 5.2A D2PAK
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IRL620S
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 200V 5.2A D2PAK
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IRL620STRLPBF
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 200V 5.2A D2PAK
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IRL620STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 200V 5.2A D2PAK
|
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