Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 5.20 A
Technical parameters/rise time: 31 ns
Technical parameters/descent time: 17 ns
Encapsulation parameters/installation method: Surface Mount
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL620S
|
International Rectifier | 完全替代 |
MOSFET N-CH 200V 5.2A D2PAK
|
|||
IRL620S
|
IRF | 完全替代 |
MOSFET N-CH 200V 5.2A D2PAK
|
|||
IRL620S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 5.2A D2PAK
|
||
IRL620SPBF
|
Vishay Intertechnology | 完全替代 | D2PAK |
MOSFET N-CH 200V 5.2A D2PAK
|
||
IRL620SPBF
|
Vishay Semiconductor | 完全替代 | TO-263 |
MOSFET N-CH 200V 5.2A D2PAK
|
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