Technical parameters/dissipated power: 150W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 2200pF @25V(Vds)
Technical parameters/rated power (Max): 150 W
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540
|
Infineon | 完全替代 |
MOSFET N-CH 100V 28A TO-220AB
|
|||
IRL540NPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRL540NPBF 场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB 新
|
||
|
|
IFC | 功能相似 |
INTERNATIONAL RECTIFIER IRL540NPBF 场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB 新
|
|||
IRL540NPBF
|
IFA | 功能相似 |
INTERNATIONAL RECTIFIER IRL540NPBF 场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB 新
|
|||
IRL540NPBF
|
Infineon | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRL540NPBF 场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB 新
|
||
IRL540PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
||
IRL540PBF
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
|||
IRL540PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
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