Technical parameters/rated voltage (DC): | 100 V |
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Technical parameters/rated current: | 36.0 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 0.044 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 140 W |
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Technical parameters/product series: | IRL540N |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/Input capacitance: | 1800pF @25V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/Continuous drain current (Ids): | 36.0 A |
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Technical parameters/rise time: | 81.0 ns |
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Technical parameters/Input capacitance (Ciss): | 1800pF @25V(Vds) |
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Technical parameters/rated power (Max): | 140 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.54 mm |
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Dimensions/Height: | 15.24 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
|||
STP24NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
|
||
STP35NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP35NF10 晶体管, MOSFET, N沟道, 40 A, 100 V, 35 mohm, 10 V, 3 V
|
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