Technical parameters/rated power: 140 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.044 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 140 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 1800 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 36A
Technical parameters/rise time: 81 ns
Technical parameters/Input capacitance (Ciss): 1800pF @25V(Vds)
Technical parameters/descent time: 62 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/width: 4.4 mm
External dimensions/height: 8.77 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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|||
STP24NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
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||
STP35NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP35NF10 晶体管, MOSFET, N沟道, 40 A, 100 V, 35 mohm, 10 V, 3 V
|
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