Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 2350pF @25V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 126000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75321P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
||
HUF75321P3
|
Intersil | 功能相似 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
|||
HUF75321P3
|
Rochester | 功能相似 | TO-220 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
||
|
|
Motorola | 功能相似 | Through Hole |
TO-220AB N-CH 60V 42A
|
||
MTP50N06V
|
ON Semiconductor | 功能相似 | TO-220 |
TO-220AB N-CH 60V 42A
|
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