Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 42A
Technical parameters/rise time: 122 ns
Technical parameters/Input capacitance (Ciss): 1644pF @25V(Vds)
Technical parameters/descent time: 54 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75321P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
||
HUF75321P3
|
Intersil | 功能相似 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
|||
HUF75321P3
|
Rochester | 功能相似 | TO-220 |
ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75321P3, 35 A, Vds=55 V, 3引脚 TO-220AB封装
|
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