Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 55 ns
Technical parameters/Input capacitance (Ciss): 680pF @25V(Vds)
Technical parameters/rated power (Max): 93 W
Technical parameters/descent time: 66 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 93 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75321P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
35A ， 55V ， 0.034 Ohm的N通道UltraFET功率MOSFET 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
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HUF75321P3
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Intersil | 功能相似 |
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HUF75321P3
|
Rochester | 功能相似 | TO-220 |
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IRFZ40
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ON Semiconductor | 功能相似 |
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VISHAY | 功能相似 | TO-220 |
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IRFZ40
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International Rectifier | 功能相似 | TO-220-3 |
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Motorola | 功能相似 | Through Hole |
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MTP50N06V
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