Technical parameters/drain source resistance: 2.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 370 W
Technical parameters/product series: IRFS3107
Technical parameters/threshold voltage: 2.35 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 230 A
Technical parameters/Input capacitance (Ciss): 9370pF @50V(Vds)
Technical parameters/rated power (Max): 370 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 370000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IFA | 类似代替 |
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
|
|||
IRFS3107TRLPBF
|
International Rectifier | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
|
||
IRFS3207ZPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
||
IRFS3207ZPBF
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
||
STB160N75F3
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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