Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 2.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 370 W
Technical parameters/product series: IRFS3107
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Input capacitance (Ciss): 9370pF @50V(Vds)
Technical parameters/rated power (Max): 370 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB160N75F3
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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