Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 330 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 65 ns
Technical parameters/Input capacitance (Ciss): 6750pF @25V(Vds)
Technical parameters/rated power (Max): 330 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 330W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.75 mm
External dimensions/width: 10.4 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB031N08
|
Fairchild | 功能相似 | TO-263-3 |
FDB031N08 系列 75 V 3.1 mOhm N沟道 PowerTrench® MOSFET - D2PAK-3
|
||
STP160N75F3
|
ST Microelectronics | 完全替代 | TO-220-3 |
STMICROELECTRONICS STP160N75F3 晶体管, MOSFET, N沟道, 60 A, 75 V, 0.0035 ohm, 10 V, 4 V
|
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