Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 375 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 235A
Technical parameters/rise time: 191 ns
Technical parameters/Input capacitance (Ciss): 15160pF @25V(Vds)
Technical parameters/rated power (Max): 375 W
Technical parameters/descent time: 121 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 11.33 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN008-75B,118
|
Nexperia | 功能相似 | TO-263-3 |
D2PAK N-CH 75V 75A
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||
PSMN008-75B,118
|
NXP | 功能相似 | TO-263-3 |
D2PAK N-CH 75V 75A
|
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STB160N75F3
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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