Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 8.5 mΩ |
|
Technical parameters/dissipated power: | 230 W |
|
Technical parameters/Input capacitance: | 5260 pF |
|
Technical parameters/drain source voltage (Vds): | 75 V |
|
Technical parameters/Leakage source breakdown voltage: | 75 V |
|
Technical parameters/rise time: | 55 ns |
|
Technical parameters/Input capacitance (Ciss): | 5260pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 230 W |
|
Technical parameters/descent time: | 80 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 230W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.3 mm |
|
Dimensions/Width: | 9.4 mm |
|
Dimensions/Height: | 4.5 mm |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB031N08
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Fairchild | 功能相似 | TO-263-3 |
FDB031N08 系列 75 V 3.1 mOhm N沟道 PowerTrench® MOSFET - D2PAK-3
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PSMN008-75B
|
Nexperia | 功能相似 | SOT-404 |
Power Field-Effect Transistor
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PSMN008-75B
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Philips | 功能相似 |
Power Field-Effect Transistor
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PSMN008-75B
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NXP | 功能相似 | D2PAK |
Power Field-Effect Transistor
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PSMN008-75B,118
|
Nexperia | 功能相似 | TO-263-3 |
N沟道 VDS=75V VGS=±20V ID=75A P=230W
|
||
PSMN008-75B,118
|
NXP | 功能相似 | TO-263-3 |
N沟道 VDS=75V VGS=±20V ID=75A P=230W
|
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