Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): -200 V
Technical parameters/Continuous drain current (Ids): -3.60 A
Package parameters/number of pins: 3
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD5P20
|
Fairchild | 功能相似 | DPAK |
200V P沟道MOSFET 200V P-Channel MOSFET
|
||
FQD5P20TM
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FQD5P20TM 晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
|
||
IRFR9220TRPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR9220TRPBF
|
International Rectifier | 功能相似 | TO-252 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
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