Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 9.20 A
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/rated power (Max): 170 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 170 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540NSTRLPBF
|
IFA | 功能相似 |
100V,33A,N沟道功率MOSFET
|
|||
IRF540NSTRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
100V,33A,N沟道功率MOSFET
|
||
IRFS9N60A
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 600V 9.2A D2PAK
|
|||
IRFS9N60A
|
International Rectifier | 功能相似 |
MOSFET N-CH 600V 9.2A D2PAK
|
|||
IRFS9N60APBF
|
Vishay Intertechnology | 功能相似 |
MOSFET N-CH 600V 9.2A D2PAK
|
|||
IRFS9N60APBF
|
International Rectifier | 功能相似 |
MOSFET N-CH 600V 9.2A D2PAK
|
|||
IRFS9N60APBF
|
VISHAY | 功能相似 | TO-263-3 |
MOSFET N-CH 600V 9.2A D2PAK
|
||
STB10NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB10NK60ZT4 功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
|
||
STB9NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB9NK60ZT4 功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review