Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 33.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.044 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 130 W
Technical parameters/product series: IRF540NS
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1960pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 33.0 A
Technical parameters/rise time: 35.0 ns
Technical parameters/Input capacitance (Ciss): 1960pF @25V(Vds)
Technical parameters/rated power (Max): 130 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 130W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540NSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF540NSPBF 晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
|
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