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Model IRFS9N60APBF
Description Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Brand: International Rectifier
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Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4084) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 9.20 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 170 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 9.20 A

Technical parameters/rise time: 25.0 ns

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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