Technical parameters/drain source resistance: 4.8 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/product series: IRFS4310Z
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 127 A
Technical parameters/Input capacitance (Ciss): 6860pF @50V(Vds)
Technical parameters/rated power (Max): 250 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS4310PBF
|
Infineon | 类似代替 | TO-263-3 |
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRFS4310ZTRLPBF
|
Infineon | 类似代替 | TO-263-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon
|
||
STB120NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB120NF10T4 晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
|
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