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Model IRFS4310ZTRLPBF

Description HEXFET® N 通道功率 MOSFET 超过 55A，Infineon

Brand: Infineon

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	250 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0048 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	250 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	127A
Technical parameters/rise time:	60 ns
Technical parameters/Input capacitance (Ciss):	6860pF @50V(Vds)
Technical parameters/rated power (Max):	250 W
Technical parameters/descent time:	57 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	250W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	11.3 mm
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Battery Operated Drive
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

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AUIRFS4310ZTRL	Infineon	功能相似	TO-252-3	晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V	PDF
IRFS4310ZPBF	Infineon	类似代替	TO-263-3	INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V	PDF
IRFS4310ZPBF	International Rectifier	类似代替	TO-263-3	INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V	PDF
IRFS4310ZPBF	IFC	类似代替		INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V	PDF