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Model IRFS4310PBF
Description N Channel power MOSFET exceeds 100A, Infineon # # MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust single and dual N-channel and P-channel device combination provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.33  yuan 10.33yuan
5+:
$ 12.0896
50+:
$ 11.5730
200+:
$ 11.2836
500+:
$ 11.2113
1000+:
$ 11.1390
2500+:
$ 11.0563
5000+:
$ 11.0046
7500+:
$ 10.9530
Quantity
5+
50+
200+
500+
1000+
Price
$12.0896
$11.5730
$11.2836
$11.2113
$11.1390
Price $ 12.0896 $ 11.5730 $ 11.2836 $ 11.2113 $ 11.1390
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1962) Minimum order quantity(5)
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Technical parameters/rated power: 330 W

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.0056 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 300 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/Continuous drain current (Ids): 130A

Technical parameters/rise time: 110 ns

Technical parameters/Input capacitance (Ciss): 7670pF @50V(Vds)

Technical parameters/rated power (Max): 300 W

Technical parameters/descent time: 78 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFS4310ZPBF IRFS4310ZPBF Infineon 类似代替 TO-263-3
INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
PDF
IRFS4310ZPBF IRFS4310ZPBF International Rectifier 类似代替 TO-263-3
INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
PDF
IRFS4310ZPBF IRFS4310ZPBF IFC 类似代替
INFINEON IRFS4310ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
PDF

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