Technical parameters/dissipated power: 170W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 1423pF @25V(Vds)
Technical parameters/dissipated power (Max): 170W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS11N50APBF
|
Vishay Semiconductor | 完全替代 | TO-263 |
Trans MOSFET N-CH 500V 11A 3Pin(2+Tab) D2PAK
|
||
IRFS11N50APBF
|
LiteOn | 完全替代 | D2PAK-2 |
Trans MOSFET N-CH 500V 11A 3Pin(2+Tab) D2PAK
|
||
IRFS11N50APBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
Trans MOSFET N-CH 500V 11A 3Pin(2+Tab) D2PAK
|
||
IRFS11N50ATRLP
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 11A D2PAK
|
||
IRFS11N50ATRLP
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 500V 11A D2PAK
|
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