Technical parameters/dissipated power: 170W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 1423pF @25V(Vds)
Technical parameters/dissipated power (Max): 170W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS11N50A
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 11A D2PAK
|
||
IRFS11N50APBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.52Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
||
IRFS11N50APBF
|
LiteOn | 功能相似 | D2PAK-2 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.52Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
||
IRFS11N50APBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.52Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
||
STB10NB50
|
ST Microelectronics | 功能相似 | D2PAK |
N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK的PowerMESH ] MOSFET N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET
|
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