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Model IRFS11N50APBF
Description VISHAY IRFS11N50APBF 晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.5  yuan 10.5yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5842) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.52 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

170 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Continuous drain current (Ids):

11.0 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Packaging:

TO-263

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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