Technical parameters/rated power: 140 W
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 140 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 91A
Technical parameters/rise time: 76 ns
Technical parameters/Input capacitance (Ciss): 2840pF @25V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/descent time: 48 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR1010ZTRR
|
Infineon | 完全替代 | TO-252-3 |
DPAK N-CH 55V 91A
|
||
IRFR1010ZTRPBF
|
VISHAY | 类似代替 | TO-252 |
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 4 V
|
||
STD60N55F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
||
STD70N6F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
STD70N6F3 系列 60 V 10.5 mOhm N 沟道 STripFET™ III 功率 MOSFET - TO-252
|
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