Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110 W
Technical parameters/input capacitance: 2200 pF
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 2200pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 11.5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1018EPBF
|
Infineon | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) DPAK Tube
|
||
IRFR3607PBF
|
International Rectifier | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 75V 80A 3Pin(2+Tab) DPAK Tube
|
||
IRLR3636TRPBF
|
Infineon | 功能相似 | TO-252-3 |
N沟道,60V,99A,8.3mΩ@4.5V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review