Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/product series: IRFR3607
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/Input capacitance (Ciss): 3070pF @50V(Vds)
Technical parameters/rated power (Max): 140 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD60N55F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ F3,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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