Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7.5 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 140 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/Continuous drain current (Ids): 91A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1010ZTRLPBF
|
Infineon | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRFR1010ZTRLPBF DPAK
|
||
IRFR1010ZTRLPBF
|
International Rectifier | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRFR1010ZTRLPBF DPAK
|
||
IRFR1010ZTRPBF
|
VISHAY | 类似代替 | TO-252 |
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 4 V
|
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