Technical parameters/drain source resistance: 7.34 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/product series: IRFR3607
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 80.0 mA
Technical parameters/Input capacitance (Ciss): 3070pF @50V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140 W
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR3607
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON AUIRFR3607 晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 10 V, 2 V
|
||
IRFR3607PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR3607PBF 晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 20 V, 4 V
|
||
STD60N55F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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