Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR220NPBF
|
Infineon | 功能相似 | TO-252-3 |
INTERNATIONAL RECTIFIER IRFR220NPBF 场效应管, N 通道, MOSFET, 200V, 5A, D-PAKS 新
|
||
IRFR220NPBF
|
Kersemi Electronic | 功能相似 |
INTERNATIONAL RECTIFIER IRFR220NPBF 场效应管, N 通道, MOSFET, 200V, 5A, D-PAKS 新
|
|||
IRFR220NTRPBF
|
Infineon | 功能相似 | TO-252-3 |
200V,5A,N沟道功率MOSFET
|
||
IRFR220PBF
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220PBF
|
ETC | 类似代替 |
MOSFET N-CH 200V 4.8A DPAK
|
|||
IRFR220TRLPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
|
|
ETC | 完全替代 |
MOSFET N-CH 200V 4.8A DPAK
|
|||
IRFR220TRLPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRRPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
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