Technical parameters/rated power: 43 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.6 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 43 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/rated power (Max): 43 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 43W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR220NPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
||
IRFR220NPBF
|
Kersemi Electronic | 类似代替 |
INFINEON IRFR220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
|||
IRFR220NTRRPBF
|
International Rectifier | 类似代替 | DPAK-252 |
N沟道 200V 5A
|
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