Technical parameters/dissipated power: 42 W
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR220TRLPBF
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
|
|
ETC | 类似代替 |
MOSFET N-CH 200V 4.8A DPAK
|
|||
IRFR220TRLPBF
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRPBF
|
VISHAY | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
|
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRPBF
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRPBF
|
ETC | 类似代替 |
MOSFET N-CH 200V 4.8A DPAK
|
|||
IRFR220TRRPBF
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
||
IRFR220TRRPBF
|
VISHAY | 类似代替 | TO-252-3 |
MOSFET N-CH 200V 4.8A DPAK
|
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