Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 27.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140W (Tc)
Technical parameters/product series: IRFP140N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100V (min)
Technical parameters/Continuous drain current (Ids): 33.0 A
Technical parameters/rise time: 39.0 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Samsung | 功能相似 | TO-3 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
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IRFP140
|
VISHAY | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
||
IRFP140
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
IRFP140
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
||
IRFP140
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
IRFP140N
|
Infineon | 功能相似 | TO-247-3 |
33A ， 100V ， 0.040 Ohm的N通道功率MOSFET 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
|
||
IRFP140N
|
International Rectifier | 功能相似 | TO-247 |
33A ， 100V ， 0.040 Ohm的N通道功率MOSFET 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
|
||
IRFP140NPBF
|
Infineon | 类似代替 | TO-247-3 |
INFINEON IRFP140NPBF 晶体管, MOSFET, HEXFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
|
||
IRFP140NPBF
|
International Rectifier | 类似代替 | TO-247-3 |
INFINEON IRFP140NPBF 晶体管, MOSFET, HEXFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
|
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