Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 31.0 A
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 31.0 A
Technical parameters/rise time: 44.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP150
|
Vishay Semiconductor | 功能相似 | TO-247-3 |
HIGH VOLTAGE POWER MOSFET DIE
|
||
IRFP150
|
IXYS Semiconductor | 功能相似 |
HIGH VOLTAGE POWER MOSFET DIE
|
|||
IRFP150
|
International Rectifier | 功能相似 | TO-247 |
HIGH VOLTAGE POWER MOSFET DIE
|
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