Technical parameters/dissipated power: | 180 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/rise time: | 44 ns |
|
Technical parameters/Input capacitance (Ciss): | 1700pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 180 W |
|
Technical parameters/descent time: | 43 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 180000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Packaging: | TO-247-3 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP150
|
Vishay Semiconductor | 功能相似 | TO-247-3 |
HIGH VOLTAGE POWER MOSFET DIE
|
||
IRFP150
|
IXYS Semiconductor | 功能相似 |
HIGH VOLTAGE POWER MOSFET DIE
|
|||
IRFP150
|
International Rectifier | 功能相似 | TO-247 |
HIGH VOLTAGE POWER MOSFET DIE
|
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