Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 37.0 A
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/Continuous drain current (Ids): 37.0 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ48G
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 37A TO220FP
|
||
IRFIZ48G
|
International Rectifier | 完全替代 | Through Hole |
MOSFET N-CH 60V 37A TO220FP
|
||
IRFIZ48GPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
International Rectifier | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
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