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Model IRFIZ48GPBF

Description N 通道 MOSFET，60V 至 90V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

Brand: Vishay Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.018 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	50 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	37.0 A
Technical parameters/rise time:	250 ns
Technical parameters/Input capacitance (Ciss):	2400pF @25V(Vds)
Technical parameters/descent time:	250 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	50 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.41 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	9.8 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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