Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.018 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 37.0 A
Technical parameters/rise time: 250 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 250 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/height: 9.8 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ48G
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 37A TO220FP
|
||
IRFIZ48G
|
International Rectifier | 完全替代 | Through Hole |
MOSFET N-CH 60V 37A TO220FP
|
||
IRFIZ48GPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
International Rectifier | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
||
IRFIZ48GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
Power Field-Effect Transistor, 37A I(D), 60V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3Pin
|
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