Technical parameters/drain source resistance: 50 mΩ
Technical parameters/dissipated power: 42000 mW
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/descent time: 52 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2232(F)
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International Rectifier | 类似代替 | TO-220 |
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IRF | 类似代替 |
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IRFZ24N
|
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|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP36NF06FP 晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
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